Electrophysical properties of epitaxial gallium arsenide...

Russian Physics Journal 1995 / 02 Vol. 38; Iss. 2

Electrophysical properties of epitaxial gallium arsenide doped with acceptor impurities

M. D. Vilisova, Yu. G. Kataev, N. A. Chernov, I. A. Bobrovnikova, I. V. Teterkina, L. G. Lavrent'eva
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Volume:
38
Language:
english
Pages:
4
DOI:
10.1007/bf00560238
Date:
February, 1995
File:
PDF, 337 KB
english, 1995
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