Efficiency of the formation of radiation defects in...

Russian Physics Journal 1993 / 11 Vol. 36; Iss. 11

Efficiency of the formation of radiation defects in heat-treated dislocation-free zone n-silicon

I. I. Kolkovskii, V. V. Kraskovskaya, V. F. Latyshenko, V. V. Shusha
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Volume:
36
Language:
english
Pages:
3
DOI:
10.1007/bf00560452
Date:
November, 1993
File:
PDF, 216 KB
english, 1993
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