Epitaxial gaas p-n junctions grown in a closed iodide...

Russian Physics Journal 1970 / 02 Vol. 13; Iss. 2

Epitaxial gaas p-n junctions grown in a closed iodide system with various iodine concentrations

L. G. Lavrent'eva, M. D. Vilisova, S. P. Gaidareva, O. M. Ivleva
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Volume:
13
Language:
english
Pages:
4
DOI:
10.1007/bf00814090
Date:
February, 1970
File:
PDF, 288 KB
english, 1970
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