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Electronic Structure of B δ-Doped Si Quantum Wells at Room Temperature: The High Density Limit
L.M. Gaggero-Sager, M.E. Mora-RamosVolume:
210
Year:
1998
Language:
english
Pages:
6
DOI:
10.1002/(sici)1521-3951(199811)210:13.0.co;2-n
File:
PDF, 128 KB
english, 1998