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Effect of the means of substrate processing on the growth kinetics of autoepitaxial layers of gallium arsenide and their properties
L. G. Lavrent'eva, L. P. Porokhovnichenko, I. V. Ivonin, L. M. Krasil'nikova, N. N. IvanovaVolume:
17
Language:
english
Pages:
5
DOI:
10.1007/bf00889906
Date:
January, 1974
File:
PDF, 742 KB
english, 1974