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Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors
V. V. Antonov, A. V. Voitsekhovskii, M. A. Krivov, E. V. Malisova, É. N. Mel'chenko, M. P. Nikiforova, E. A. Popova, G. M. Fuks, S. S. KhludkovVolume:
24
Language:
english
Pages:
4
DOI:
10.1007/bf00891590
Date:
March, 1981
File:
PDF, 338 KB
english, 1981