Effects of growth temperature and substrate orientation on...

Russian Physics Journal 1982 / 11 Vol. 25; Iss. 11

Effects of growth temperature and substrate orientation on the entry of tellurium into epitaxial gallium arsenide films

L. G. Lavrent'eva, M. D. Vilisova, V. A. Moskovkin, S. E. Toropov
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Volume:
25
Language:
english
Pages:
5
DOI:
10.1007/bf00891890
Date:
November, 1982
File:
PDF, 421 KB
english, 1982
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