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Investigation of transitional layers in epitaxial gallium arsenide: Micromorphology and electron distribution in the layers, in dependence on the growth time in an iodine system
L. G. Lavrent'eva, M. D. Vilisova, I. V. Ivonin, L. M. Krasil'nikova, F. A. Kuznetsov, Yu. M. Rumyantsev, M. P. YakubenyaVolume:
16
Language:
english
Pages:
7
DOI:
10.1007/bf00892672
Date:
February, 1973
File:
PDF, 1.55 MB
english, 1973