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Electrical properties of Al-SiO2Si structure with plasmochemical insulator: Potential barrier heights and electron capture in SiO2
É. A. Skrypnik, A. N. Blagodarov, V. Ya. Kunin, I. V. Kochnev, V. D. Zhuravov, N. I. Bulan'kovVolume:
24
Language:
english
Pages:
6
DOI:
10.1007/bf00894498
Date:
January, 1981
File:
PDF, 522 KB
english, 1981