Growth and impurity-trapping kinetics in sulfur-doped...

Russian Physics Journal 1988 / 01 Vol. 31; Iss. 1

Growth and impurity-trapping kinetics in sulfur-doped gallium arsenide epitaxy

M. D. Vilisova, L. G. Lavrent'eva, L. P. Porokhovnichenko, N. A. Chernov
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Volume:
31
Language:
english
Pages:
5
DOI:
10.1007/bf00896689
Date:
January, 1988
File:
PDF, 362 KB
english, 1988
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