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A New Method of Determination of Parameters of Traps in Semiconductors
V.M. Aroutiounian, V.V. Bouniatian, S.Sh. Gevorgian, P. SoukiassianVolume:
210
Year:
1998
Language:
english
Pages:
4
DOI:
10.1002/(sici)1521-3951(199812)210:23.0.co;2-p
File:
PDF, 135 KB
english, 1998