Dependence of the rate of growth of epitaxial layers of...

Russian Physics Journal 1984 / 05 Vol. 27; Iss. 5

Dependence of the rate of growth of epitaxial layers of indium arsenide on the temperature of deposition in the system in As-AsC13-H2

G. A. Aleksandrova, I. V. Ivonin, L. M. Krasil'nikova, L. G. Lavrent'eva, P. B. Paschenko, A. E. Shubin
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
27
Language:
english
Pages:
5
DOI:
10.1007/bf00898605
Date:
May, 1984
File:
PDF, 467 KB
english, 1984
Conversion to is in progress
Conversion to is failed