Mobility Edge in Nondegenerate Semiconductor with Random...

physica status solidi (b) 1998 Vol. 210; Iss. 2

Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities

M.S. Kagan, E.G. Landsberg, N.G. Zhdanova, I.V. Altukhov
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Volume:
210
Year:
1998
Language:
english
Pages:
5
DOI:
10.1002/(sici)1521-3951(199812)210:23.0.co;2-5
File:
PDF, 152 KB
english, 1998
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