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The effect of carrier concentration in the semiconductor on the voltage-current characteristics of Schottky barrier diodes at low temperatures
V. G. Bozhkov, O. Yu. MalakhovskiiVolume:
29
Language:
english
Pages:
6
DOI:
10.1007/bf00900754
Date:
October, 1986
File:
PDF, 561 KB
english, 1986