Formation of p-n junctions in tellurium-doped AlxGa1−xSb(As) (x = 0.15–0.20) solid solution layers
A. P. Vyatkin, V. P. Germogenov, Ya. I. Otman, L. S. KhludkovaVolume:
27
Language:
english
Pages:
4
DOI:
10.1007/bf00902157
Date:
November, 1984
File:
PDF, 373 KB
english, 1984