Formation of p-n junctions in tellurium-doped...

Formation of p-n junctions in tellurium-doped AlxGa1−xSb(As) (x = 0.15–0.20) solid solution layers

A. P. Vyatkin, V. P. Germogenov, Ya. I. Otman, L. S. Khludkova
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Volume:
27
Language:
english
Pages:
4
DOI:
10.1007/bf00902157
Date:
November, 1984
File:
PDF, 373 KB
english, 1984
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