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Level-Resonance Transition of Deep States Produced by Nitrogen Vacancies in Nitride Semiconductors
E. Yamaguchi, K. Shiraishi, H. KageshimaVolume:
211
Year:
1999
Language:
english
Pages:
5
DOI:
10.1002/(sici)1521-3951(199901)211:13.0.co;2-s
File:
PDF, 128 KB
english, 1999