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Compression Mechanisms in Highly Anisotropic Semiconductors
H. C. Hsueh, J. CrainVolume:
211
Year:
1999
Language:
english
Pages:
8
DOI:
10.1002/(sici)1521-3951(199901)211:13.0.co;2-o
File:
PDF, 186 KB
english, 1999