Electrical properties of epitaxial GaN grown from GaBr3....

Crystal Research and Technology 1975 Vol. 10; Iss. 4

Electrical properties of epitaxial GaN grown from GaBr3. 4NH3

Doz. Dr. sc. H. Neumann, M. Staudte, Dr. A. Tempel, J. Żytecki, Dr. R. Łappa
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Volume:
10
Year:
1975
Language:
english
Pages:
1
DOI:
10.1002/crat.19750100417
File:
PDF, 171 KB
english, 1975
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