Epitaxial growth of GaN on {1012} oriented sapphire in...

Epitaxial growth of GaN on {1012} oriented sapphire in GaCl/NH3/He and GaCl/NH3/H2 systems

G. Fitzl, A. Tempel, W. Seifert, E. Butter
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Volume:
15
Year:
1980
Language:
english
Pages:
7
DOI:
10.1002/crat.19800151011
File:
PDF, 474 KB
english, 1980
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