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Investigation of the growth processes from vapor phase of silicon carbide epitaxial layers: Thermodynamic analysis of the high temperature processes in the system Si-C-H-Cl
S. K. LilovVolume:
43
Year:
2008
Language:
english
Pages:
5
DOI:
10.1002/crat.200711074
File:
PDF, 228 KB
english, 2008