Three-dimensional study of the pressure field and...

Crystal Research and Technology 2010 Vol. 45; Iss. 6

Three-dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth

F. Mokhtari, A. Bouabdallah, A. Merah, M. Zizi, S. Hanchi, A. Alemany
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Volume:
45
Year:
2010
Language:
english
Pages:
10
DOI:
10.1002/crat.201000033
File:
PDF, 920 KB
english, 2010
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