X-Ray topographic study of the influence of thermal...

Crystal Research and Technology 1982 Vol. 17; Iss. 9

X-Ray topographic study of the influence of thermal annealing on the bending of 49BF2+-implanted Si wafers

Dr. I. S. Vassilev, Dr. Z. Furmanik, I. N. Petrov, P. A. Botev, Prof. Dr. J. Auleytner
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Volume:
17
Year:
1982
Language:
english
Pages:
9
DOI:
10.1002/crat.2170170916
File:
PDF, 577 KB
english, 1982
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