On the origin of free carriers in high-conducting n-GaN

On the origin of free carriers in high-conducting n-GaN

Dr. W. Seifert, Dipl.-Chem. R. Franzheld, Prof. Dr. E. Butter, Dr. H. Sobotta, Dr. V. Riede
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Volume:
18
Year:
1983
Language:
english
Pages:
8
DOI:
10.1002/crat.2170180314
File:
PDF, 443 KB
english, 1983
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