The influence of gas-phase etch removal, deposition temperature and substrate properties on the crystallographic perfection of silicon epitaxial layers
Dr. F. Richter, Dr. G. Weidner, Dipl.-Kristallphys. A. Borchardt, Dipl.-Phys. E. Bugiel, Dipl.-Phys. M. Kittler, Dr. K. Schmalz, Dr. M. Weidner, Dr. H. RauschVolume:
18
Year:
1983
Language:
english
Pages:
11
DOI:
10.1002/crat.2170181216
File:
PDF, 959 KB
english, 1983