Growth mechanism in atomic layer epitaxy (III)...

Growth mechanism in atomic layer epitaxy (III) reevaporation of Cd and Te from CdTe (111) surfaces and thick elemental deposits monitored by quadrupole-mass spectrometry

Dr. habil. M. A. Herman, P. Juza, Mag. W. Faschinger, Dr. H. Sitter
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Volume:
23
Year:
1988
Language:
english
Pages:
11
DOI:
10.1002/crat.2170230304
File:
PDF, 635 KB
english, 1988
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