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Organometallic vapour phase epitaxy of galliumarsenide using Ga(CH3)3 · N(CH3)3-adduct as precursor
Doz. Dr. sc. W. Seifert, K. Ploska, Dr. S. Schwetlick, Prof. Dr. sc. E. ButterVolume:
24
Year:
1989
Language:
english
Pages:
5
DOI:
10.1002/crat.2170240106
File:
PDF, 262 KB
english, 1989