X-ray and RHEED Characterization of Ge Ions-Implanted Si...

Crystal Research and Technology 1992 Vol. 27; Iss. 7

X-ray and RHEED Characterization of Ge Ions-Implanted Si Crystals Subjected to Pulsed-Laser Annealing

Prof. J. Auleytner, Dr. H. Fiedorowicz, Z. Furmanik, Dr. Z. Patron, Dr. K. Regiński
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Volume:
27
Year:
1992
Language:
english
Pages:
6
DOI:
10.1002/crat.2170270715
File:
PDF, 376 KB
english, 1992
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