Vapour pressure controlled Czochralski (VCZ) growth — a method to produce electronic materials with low dislocation density
Prof. Dr. P. Rudolph, Dr. M. Neubert, S. Arulkumaran, M. SeifertVolume:
32
Year:
1997
Language:
english
Pages:
16
DOI:
10.1002/crat.2170320104
File:
PDF, 1013 KB
english, 1997