Implantation site of boron in heavily doped silicon: A...

Hyperfine Interactions 1990 / 08 Vol. 60; Iss. 1-4

Implantation site of boron in heavily doped silicon: A β-NMR study

H. Metzner, G. Sulzer, W. Seelinger, B. Ittermann, H. -P. Erank, B. Fischer, K. -H. Ergezinger, R. Dippel, E. Diehl, H. -J. Stöckmann, H. Ackermann
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Volume:
60
Language:
english
Pages:
4
DOI:
10.1007/bf02399866
Date:
August, 1990
File:
PDF, 190 KB
english, 1990
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