Investigation of deep levels of AsGaand GaAsantistructural...

Russian Physics Journal 1996 / 08 Vol. 39; Iss. 8

Investigation of deep levels of AsGaand GaAsantistructural defects and InAsand SbGaheteroantistructural defects in GaAs using a 4×4×4 expanded unit cell technique

S. N. Grinyaev, V. A. Chaldyshev
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Volume:
39
Language:
english
Pages:
7
DOI:
10.1007/bf02437080
Date:
August, 1996
File:
PDF, 547 KB
english, 1996
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