FT-Raman Studies of Charged Defects Created on Methyl...

FT-Raman Studies of Charged Defects Created on Methyl End-Capped Oligothiophenes by Doping with NOBF4

Juan Casado, Víctor Hernández, Shu Hotta, Juan T. López Navarrete
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Volume:
10
Year:
1998
Language:
english
Pages:
4
DOI:
10.1002/(sici)1521-4095(199812)10:173.0.co;2-w
File:
PDF, 155 KB
english, 1998
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