Low temperature cleaning of Si by a H2/AsH3plasma prior to...

Journal of Electronic Materials 1990 / 04 Vol. 19; Iss. 4

Low temperature cleaning of Si by a H2/AsH3plasma prior to heteroepitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD)

Euijoon Yoon, Patrice Parris, Rafael Reif
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
19
Language:
english
Pages:
7
DOI:
10.1007/bf02651294
Date:
April, 1990
File:
PDF, 2.38 MB
english, 1990
Conversion to is in progress
Conversion to is failed