Growth and characterization of undoped and N-type (Te)...

Journal of Electronic Materials 1990 / 02 Vol. 19; Iss. 2

Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonide

F. Pascal, F. Delannoy, J. Bougnot, L. Gouskov, G. Bougnot, P. Grosse, J. Kaoukab
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Volume:
19
Language:
english
Pages:
9
DOI:
10.1007/bf02651744
Date:
February, 1990
File:
PDF, 815 KB
english, 1990
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