Effect of substrate annealing and V: III flux ratio on the...

Journal of Electronic Materials 1983 / 11 Vol. 12; Iss. 6

Effect of substrate annealing and V: III flux ratio on the molecular beam epitaxial growth of AlGaAs-GaAs single quantum wells

P. A. Maki, S. C. Palmateer, G. W. Wicks, L. F. Eastman, A. R. Calawa
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Volume:
12
Language:
english
Pages:
13
DOI:
10.1007/bf02654974
Date:
November, 1983
File:
PDF, 489 KB
english, 1983
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