Optimization of selective area growth of GaAs by low...

Journal of Electronic Materials 1994 / 02 Vol. 23; Iss. 2

Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits

H. Kanber, S. X. Bar, P. E. Norris, C. Beckham, M. Pacer
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
23
Language:
english
Pages:
8
DOI:
10.1007/bf02655263
Date:
February, 1994
File:
PDF, 3.24 MB
english, 1994
Conversion to is in progress
Conversion to is failed