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Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits
H. Kanber, S. X. Bar, P. E. Norris, C. Beckham, M. PacerVolume:
23
Language:
english
Pages:
8
DOI:
10.1007/bf02655263
Date:
February, 1994
File:
PDF, 3.24 MB
english, 1994