Defect chemistry and intrinsic carrier concentration for...

Journal of Electronic Materials 1983 / 09 Vol. 12; Iss. 5

Defect chemistry and intrinsic carrier concentration for Hg1−xCdxTe(s) for x = 0.20, 0.40, and 1.0

Ching-Hua Su, Pok-Kai Liao, R. F. Brebrick
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Volume:
12
Language:
english
Pages:
56
DOI:
10.1007/bf02655295
Date:
September, 1983
File:
PDF, 1.83 MB
english, 1983
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