Ultra-shallow raised p+−n junctions formed by diffusion...

Journal of Electronic Materials 1995 / 10 Vol. 24; Iss. 10

Ultra-shallow raised p+−n junctions formed by diffusion from selectively depositedIn-situdoped Si0.7Ge0.3

Douglas T. Grider, Mehmet C. Öztürk, Stanton P. Ashburn, Jimmie J. Wortman, Gari Harris, Dennis Maher
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Volume:
24
Language:
english
Pages:
8
DOI:
10.1007/bf02655450
Date:
October, 1995
File:
PDF, 1.22 MB
english, 1995
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