The growth and characterization of device quality InP/...

Journal of Electronic Materials 1986 / 07 Vol. 15; Iss. 4

The growth and characterization of device quality InP/ Ga1-xinxasyp1-ydouble heterostructures by atmospheric-pressure MOVPE using trimethylindium

A. Mircea, R. Mellet, B. Rose, D. Robein, H. Thibierge, G. Leroux, P. Daste, S. Godefroy, P. Ossart, A-M. Pougnet
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Volume:
15
Language:
english
Pages:
9
DOI:
10.1007/bf02659633
Date:
July, 1986
File:
PDF, 719 KB
english, 1986
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