Self-organization phenomenon of strained InGaAs on InP...

Journal of Electronic Materials 1996 / 03 Vol. 25; Iss. 3

Self-organization phenomenon of strained InGaAs on InP (311) substrates grown by metalorganic vapor phase epitaxy

Jiro Temmyo, Atsuo Kozen, Toshiaki Tamamura, Richard Nötzel, Takashi Fukui, Hideki Hasegawa
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Volume:
25
Language:
english
Pages:
7
DOI:
10.1007/bf02666616
Date:
March, 1996
File:
PDF, 2.93 MB
english, 1996
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