High quality gate dielectrics formed by rapid thermal...

Journal of Electronic Materials 1996 / 03 Vol. 25; Iss. 3

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

Veena Misra, Xiaoli Xu, Brian E. Hornung, Richard T. Kuehn, Donald S. Miles, John R. Hauser, Jimmie J. Wortman
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Volume:
25
Language:
english
Pages:
9
DOI:
10.1007/bf02666631
Date:
March, 1996
File:
PDF, 844 KB
english, 1996
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