Residual impurities in GaN/Al2O3grown by metalorganic vapor...

Journal of Electronic Materials 1996 / 05 Vol. 25; Iss. 5

Residual impurities in GaN/Al2O3grown by metalorganic vapor phase epitaxy

Akihiko Ishibashi, Hidemi Takeishi, Masaya Mannoh, Yasufumi Yabuuchi, Yuzaburoh Ban
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Volume:
25
Language:
english
Pages:
5
DOI:
10.1007/bf02666639
Date:
May, 1996
File:
PDF, 634 KB
english, 1996
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