Elevated temperature nitrogen implants in 6H-SiC

Journal of Electronic Materials 1996 / 05 Vol. 25; Iss. 5

Elevated temperature nitrogen implants in 6H-SiC

Jason Gaedner, Mulpuri V. Rao, O. W. Holland, G. Kelner, David S. Simons, Peter H. Chi, John M. Andrews, J. Kretchmer, M. Ghezzo
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Volume:
25
Language:
english
Pages:
8
DOI:
10.1007/bf02666654
Date:
May, 1996
File:
PDF, 759 KB
english, 1996
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