Al2O3deposited by the oxidation of trimethylaluminum as...

Journal of Electronic Materials 1987 / 01 Vol. 16; Iss. 1

Al2O3deposited by the oxidation of trimethylaluminum as gate insulators in hydrogen sensors

T. H. Hua, M. Armgarth
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Volume:
16
Language:
english
Pages:
5
DOI:
10.1007/bf02667787
Date:
January, 1987
File:
PDF, 454 KB
english, 1987
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