![](/img/cover-not-exists.png)
Growth and in situ ellipsometric analysis of Si1-xGexalloys deposited by chemical beam epitaxy
P. Boucaud, F. Glowackv, Y. Campidellv, A. LarrÉ, F. Ferrieu, D. BensahelVolume:
23
Language:
english
Pages:
4
DOI:
10.1007/bf02670660
Date:
June, 1994
File:
PDF, 411 KB
english, 1994