Electron beam induced current investigations of active electrical defects in silicon due to reactive ion etching and reactive ion beam etching processes
G. Jäger-Waldau, H. -U. Habermeier, G. Zwicker, E. BucherVolume:
23
Language:
english
Pages:
5
DOI:
10.1007/bf02671215
Date:
April, 1994
File:
PDF, 855 KB
english, 1994