Electron beam induced current investigations of active...

Electron beam induced current investigations of active electrical defects in silicon due to reactive ion etching and reactive ion beam etching processes

G. Jäger-Waldau, H. -U. Habermeier, G. Zwicker, E. Bucher
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Volume:
23
Language:
english
Pages:
5
DOI:
10.1007/bf02671215
Date:
April, 1994
File:
PDF, 855 KB
english, 1994
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