The formation of elevated barrier height Schottky diodes to...

Journal of Electronic Materials 1990 / 11 Vol. 19; Iss. 11

The formation of elevated barrier height Schottky diodes to inp and In0.53Ga0.47as using thin, excimer laser-deposited Cd interlayers

Thomas J. Licata, Michael T. Schmidt, Dragan V. Podlesnik, Vladimir Liberman, Richard M. Osgood, Winston K. Chan, Rajaram Bhat
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Volume:
19
Language:
english
Pages:
8
DOI:
10.1007/bf02673338
Date:
November, 1990
File:
PDF, 847 KB
english, 1990
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