Carbon doped GaAs grown in low pressure-metalorganic vapor...

Journal of Electronic Materials 1995 / 11 Vol. 24; Iss. 11

Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromide

E. Richter, P. Kurpas, D. Gutsche, M. Weyers
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Volume:
24
Language:
english
Pages:
4
DOI:
10.1007/bf02676840
Date:
November, 1995
File:
PDF, 367 KB
english, 1995
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