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Annealing effect on the P-type carrier concentration in low-temperature processed arsenic-doped HgCdTe
S. H. Shin, J. M. Arias, M. Zandian, J. G. Pasko, L. O. Bubulac, R. E. De WamesVolume:
22
Language:
english
Pages:
9
DOI:
10.1007/bf02817522
Date:
August, 1993
File:
PDF, 1.13 MB
english, 1993