Origin of photoluminescence from Er3+centers in erbium...

Journal of Electronic Materials 1993 / 09 Vol. 22; Iss. 9

Origin of photoluminescence from Er3+centers in erbium doped GaAs and Al0.4Ga0.6As grown by MBE

Tong Zhang, Y. Hwang, J. Sun, N. V. Edwards, R. M. Kolbas, P. J. Caldwell
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Volume:
22
Language:
english
Pages:
4
DOI:
10.1007/bf02817685
Date:
September, 1993
File:
PDF, 390 KB
english, 1993
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