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Stacked gate insulator of photooxide and PECVD film from SiH4 and N2O for low-temperature poly-Si thin-film transistor
Yukihiko Nakata, Tetsuya Okamoto, Takashi Itoga, Toshimasa Hamada, Yutaka IshiiVolume:
86
Year:
2003
Language:
english
Pages:
8
DOI:
10.1002/ecjb.10100
File:
PDF, 1019 KB
english, 2003